苏州XDM2102单价
发货地址:广东省深圳市南山区
产品数量:9999.00个
价格:面议
封装SOP16
开发可以
烧录可以
编带可以
开票可以
XDM2102
4.1. 2300 NMOS 的电气特性参数
参数描述小值典型值值测试条件
V(BR)DSS
Drain-to-Source Breakdown Voltage
漏源击穿电压19V - - VGS=0V, ID=250uA
ID(Device Ref.)
Continuous Drain Current
漏可持续电流
- - 2A TJ = 25°C
RDS(on)
Static Drain-to-Source On-Resistance
漏源静态导通电阻
- 50 mΩ 75 mΩ VGS =5.0V, ID =2A
- 59 mΩ 90 mΩ VGS =3.0V, ID =1.5A
VGS(th)
Gate Threshold Voltage
栅阈值电压
0.4V 0.65V 1.0V VDS=VGS, ID=250uA
IDSS
Drain-to-Source Leakage Current
零栅压漏电流- - 1uA VDS =15V, VGS = 0V, TJ = 25°C
IGSS
Gate-to-Source Leakage Current
栅漏电流- - ±100nA VGS = ±12V
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